STMicroelectronics has launched the latest MDmeshâ„¢ Dk5 power MOSFET, featuring a fast-recovery body diode and a high-voltage (VHV) superjunction transistor. This innovative component empowers designers to optimize energy efficiency across various power conversion topologies, particularly in zero-voltage switching (ZVS) LLC resonant converters.
As a super-junction MOSFET, the new device is available in voltage ratings from 950V to 1050V. It outperforms traditional planar MOSFETs in terms of switching performance, on-resistance (RDS(ON)), and current density per unit of silicon area. In high-power applications such as telecom servers, data center equipment, industrial welders, plasma generators, high-frequency induction heaters, and X-ray machines, ST’s new product enables engineers to enhance energy efficiency while reducing the number of parallel devices—thereby increasing power density and system reliability.
The internal fast-recovery body diode significantly improves the efficiency of ZVS LLC resonant converters, meeting the demands of wide input voltage ranges and high-efficiency applications. Additionally, other bridge configurations and battery charging boost DC/DC converters can also benefit from the low losses and excellent dynamic performance of this new MOSFET.
Compared to existing very high-voltage MOSFETs with built-in fast-recovery diodes, the DK5 series offers the shortest reverse recovery time (trr), the lowest gate charge (Qg), and the lowest RDS(ON). It also provides superior output and input capacitance (Coss, Ciss) characteristics, making it ideal for high-performance power systems.
The DK5 family expands ST’s lineup of very high-voltage superjunction transistors, covering the 800V to 1500V range. It introduces six new power packages, including TO-247, TO-247 long-leg, Max247, and ISOTOP. Several models, such as STWA40N95DK5, STY50N105DK5, and STW40N95DK5, are already in mass production.
For more details about the product, visit the official website.
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