Chinese Academy of Sciences orders Aisheon BM System

On August 18, Aisin Co., Ltd. of Germany announced that it had received an order from the BM system of the Institute of Metal Research of the Chinese Academy of Sciences (IMR). The order is a 4-inch wafer-size BM Pro PECVD system for the study of carbon nanotubes and graphene production.

The order was received in the first quarter of 2012 and the system will be delivered in the third quarter of 2012. AIXGRON's local service support team will install and commission this deposition system in the Institute's advanced clean room facility.

“We are looking forward to the new system to be delivered, which will greatly enhance our ability to use graphene with special conductivity and chirality to control the synthesis of carbon nanotubes.” Head of Advanced Carbon Materials Research Division, Institute of Metal Research, Chinese Academy of Sciences The professor said, "I believe that with the help of Aishon BM system, we will have the ability to produce high-quality carbon nanotubes, as well as graphene with good structural characteristics and uniformity."

The company's BM system provides a complete solution for the production of carbon nanotubes and graphene. The system can be operated in thermal chemical vapor deposition or plasma enhanced chemical vapor deposition mode, and is very important for controlling the structure of carbon nanomaterials, and is suitable for the production of almost all kinds and shapes of carbon nanotubes and graphene.

The triode, the full name should be a semiconductor triode, also known as a bipolar transistor, a crystal triode, is a semiconductor device that controls current. Its function is to amplify the weak signal into an electrical signal with a large amplitude value, and also as a non-contact switch.
Transistor is one of the basic components of semiconductors, with current amplification, is the core component of electronic circuits. The triode is made up of two closely spaced PN junctions on a semiconductor substrate. The two PN junctions divide the monolithic semiconductor into three parts, the middle part is the base area, and the two sides are the emitter area and the collector area, and the arrangement is PNP. And NPN two.

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