A small quantity of a trivalent impurity element, such as boron, is introduced into the crystal lattice of silicon (or germanium). This creates a deficiency of electrons in the covalent bonds surrounding the impurity atoms, resulting in the formation of electron vacancies, or "holes." When a significant number of these holes are generated, the primary mode of electrical conduction in the semiconductor shifts from electron movement to hole movement. Such a semiconductor, where hole conduction dominates, is known as a P-type semiconductor. This process, called doping, is essential in the fabrication of electronic devices like diodes and transistors, where controlled conductivity is crucial for proper function. The presence of holes allows for efficient charge transport under an applied electric field, making P-type materials vital in modern electronics.
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